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 PD-96983
Radiation Hardended, Solid-State Relay with Buffered Inputs
Product Summary
Part Number
RDHA710SE10A2FK
RDHA710SE10A2FK Dual, 100V, 10A
Breakdown Voltage
100V
g
Current
10A
tr / tf
Fast
Logic Drive Voltage
3.3V
8-PIN SURFACE MOUNT
Description
The RDHA710SE10A2FK is a radiation hardened dual solid-state relay in a hermetic package. It is configured as a dual, single-pole-single-throw (SPST) normally open relay with common input supply. This device is characterized for 100 krad(Si) total ionizing dose and neutron fluence level of 1.8E12 n/cm2. The input and output MOSFETs utilize International Rectifier's R5 technology. T h e RDHA710SE10A2FK is optically coupled and actuated by standard logic inputs.
Features:
n n n n n n n n
Total Dose Capability to 100 krad(Si) Neutron Fluence Level of 1.8E12 n/cm2 Optically Coupled 1000VDC Input to Output Isolation Buffered Input Stage 3.3V Compatible Logic Level Input Controlled Switching Times Hermetically Sealed Package
Absolute Maximum Ratings per Channel @ Tj=25C (unless otherwise specified)
Parameter
Output Maximum Voltageg Output Current
Symbol
VS IO VIN IIN VDD IDD PDISS TJ TS TL
Value
100 12 7.5 10 5.25 25 60 -55 to +125 -65 to +150 300
Units
V A V mA V mA W C
fg
Input Buffer Voltage - (pins 4 & 6) Input Buffer Current Input Supply Current iA Power Dissipation fg Input Supply Voltage (pin 5)
e
iA
Operating Temperature Range Storage Temperature Range Lead Temperature
For notes, please refer to page 3
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1
03/29/06
RDHA710SE10A2FK
General Characteristics per Channel @ -55CdTCd+125C (Unless Otherwise Specified)
Parameter
Input Buffer Threshold Voltagece Input-to-Output Leakage Current Output Capacitancec Thermal Resistancec MTBF (Per Channel) 1
Group A
Subgroups
Test Conditions
VDD = 5.0V, IO= 10A VI-O = 1.0KVdc, dwell = 5.0s VIN = 0.1V, f = 1.0MHz, VS =25V TC = 25C VIN = 3.3V, VDD = 5.0V
Symbol Min. Typ. Max. Units
VIN(TH) II-O COSS RTHJC 3.0 ---6.0 --365 ---1.0 -1.7 -V A pF C/W MHrs
c,f
MIL-HDBK-217F, SF@Tc= 25C
Pre-Irradiation
Electrical Characteristics per Channel @ -55CdTCd+125C (Unless Otherwise Specified)
Parameter Group A
Subgroups Output On-Resistance Output Leakage Current Input Supply Current Input Buffer Current Turn-On Delayh Turn-Off Delayh Rise Timed,h Fall Timed,h 1 2 1 2 1,2,3 1 2,3 1,2,3 1,2,3 1,2,3 1,2,3 VIN = 3.3V VDD = 5.0V, IO= 10A VIN = 0.1V, VS = 100V VIN = 0.1V, VS = 80V VDD = 5.0V, IO= 10A VIN = 3.3V VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0/100F, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0/100F, PW = 50ms VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0/100F, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0/100F, PW = 50ms RDS(ON) IO IDD IIN ton toff tr tf
Test Conditions
Symbol Min. Typ. Max. Units -----------0.070 0.100 0.125 0.165 --18 --0.18 0.50 0.25 1.50 25 250 25 1.0 3.0 0.45 0.75 ms 0.40 1.80 A mA A
For notes, please refer to page 3
2
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RDHA710SE10A2FK
Post Total Dose Irradiation ,,
Electrical Characteristics per Channel @ 25C (Unless Otherwise Specified)
Parameter
Output On-Resistance Input Supply Current Output Leakage Current Input Buffer Current Turn-On Delayh Turn-Off Delayh Rise Timedh Fall Timedh
Group A
Subgroups 1 1 1 1 1 1 1 1
Test Conditions
VIN = 3.3V, VDD = 5.0V, IO= 10A VDD = 5.0V, IO= 10A VIN = 0.1V, VS = 100V VIN = 3.3V VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0/100F, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0/100F, PW = 50ms VIN =3.3V, VDD =5.0V, VS =30V RC = 7.0/100F, PW = 50ms VIN =0.1V, VDD =5.0V, VS =30V RC = 7.0/100F, PW = 50ms
Symbol Min. Typ. Max. Units
RDS(ON) IDD IO IIN ton toff tr tf
---------
0.070 0.100 18 --0.18 0.50 0.25 1.50 25 25 1.0 0.45 0.75
mA A
ms 0.40 1.80
Notes for Maximum Ratings and Electrical Characteristic Tables
m Specification is guaranteed by design Rise and fall times are controlled internally Inputs protected for VIN< 1.0V and VIN > 7.5V Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to insure that transient currents do not cause violation of SOA. If transient conditions are present, IR recommends a complete simulation to be performed by the end user to insure compliance with SOA requirements as specified in the IRHNJ57130 data sheet While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for product derating, as required for the application Reference Figures 3 & 4 for Switching Test Circuits and Wave Form Total Dose Irradiation with Input Bias. 10mA IDD applied and VDS = 0 during Irradiation Total Dose Irradiation with Output Bias. 80 Volts VDS applied and IDD = 0 during Irradiation International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program
n o
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3
RDHA710SE10A2FK
25
20
ID, Drain Current (A)
15
10
5
0 25 50 75 100 125 150
TC, Case Temperature (C)
Fig 1: Maximum Drain Current Vs Case Temperature per Channel
Pin 1 - OUT 1+ Pin 4 - INPUT 1
O pto Isolation
Pin 3 - GND Pin 5 - VDD Pin 6 - INPUT 2
O pto Isolation
Pin 2 - OUT 1Pin 8 - OUT 2+
Pin 7 - OUT 2-
Fig 2: Typical Application
Radiation Performance International Rectifier Radiation Hardened Solid State Relays are tested to verify their hardness capability. The hardness assurance program at IR uses a Cobalt-60 (60Co) Source and heavy ion irradiation. Both preand post- irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparision.
4
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RDHA710SE10A2FK
uF 100 F
Fig 3: Switching Test Circuit (Only one channel shown)
Fig 4: Switching Test Waveform
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5
RDHA710SE10A2FK
Case Outline and Dimensions -- 8-Pin Surface Mount Package
Pin Assignment
Pin # 1 2 3 4 5 6 7 8 Pin Description OUT 1 + OUT 1 INPUT GND INPUT 1 VDD INPUT 2 OUT 2 OUT 2 +
Notes
1. 2. 3. 4. Dimensioning and Tolerancing per ASME Y14.5SM-1994 Controlling Dimension: Inch Dimensions are shown in inches Tolerances are +/- 0.005 UOS
Part Numbering Nomenclature
Device Type
RD = DC Solid State Relay
RD H A 7 10 SE
10
A
2
F
K
Screening Level
K = Class K per MIL-PRF-38534
Radiation Characterization
H = RAD Hard
Features
F = 3.3 Volt Buffered Fast
Generation
A = Current Design
Poles
2 = Double Pole
Radiation Level
7 = 100K Rad (Si)
Current
10 = 10A
Throw Configuration
A = Single Throw, Normally Open
Package
SE = 8-Pin Surface Mount
Volts
10 = 100 Volts
6
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Data and specifications subject to change without notice. 03/2006
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